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Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles

Identifieur interne : 000717 ( Main/Repository ); précédent : 000716; suivant : 000718

Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles

Auteurs : RBID : Pascal:13-0169142

Descripteurs français

Pascal (Inist)
- Photoluminescence, Composé III-V, Semiconducteur III-V, Nanofil, Nanomatériau, Synthèse nanomatériau, Angle incidence, Structure blende, Structure cristalline, Structure wurtzite, Rendement quantique, Sélectivité, Phosphure d'indium, InP, Substrat nanofil, Te, Substrat InP, Substrat zinc, 7867, 8107V, 8107B, 8116.

English descriptors

KwdEn :
- Blende structure, Crystal structure, III-V compound, III-V semiconductors, Incidence angle, Indium phosphide, Nanomaterial synthesis, Nanostructured materials, Nanowires, Photoluminescence, Quantum yield, Selectivity, Wurtzite structure.

Abstract

We demonstrate a method that enables the study of photoluminescence of as-grown nanowires on a native substrate by non-destructively suppressing the contribution of substrate photoluminescence. This is achieved by using polarized photo-excitation and photoluminescence and by making an appropriate choice of incident angle of both excitation beam and photoluminescence collection direction. Using T_E-polarized excitation at a wavelength of 488 nm at an incident angle of ∼70° we suppress the InP substrate photoluminescence relative to that of the InP nanowires by about 80 times. Consequently, the photoluminescence originating from the nanowires becomes comparable to and easily distinguishable from the substrate photoluminescence. The measured photoluminescence, which peaks at photon energies of ∼1.35 eV and ∼1.49 eV, corresponds to the InP substrate with zinc-blende crystal structure and to the InP nanowires with wurtzite crystal structure, respectively. The photoluminescence quantum yield of the nanowires was found to be ∼20 times lower than that of the InP substrate. The nanowires, grown vertically in a random ensemble, neither exhibit substantial emission polarization selectivity to the axis of the nanowires nor follow excitation polarization preferences observed previously for a single nanowire.

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Pascal:13-0169142

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles</title>
<author><name sortKey="Iqbal, Azhar" uniqKey="Iqbal A">Azhar Iqbal</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemical Physics, Lund University, PO Box 124</s1>
<s2>22100 Lund</s2>
<s3>SWE</s3>
<sZ>1 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>Suède</country>
<wicri:noRegion>22100 Lund</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Beech, Jason P" uniqKey="Beech J">Jason P. Beech</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Solid State Physics, Lund University, PO Box 118</s1>
<s2>22100 Lund</s2>
<s3>SWE</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Suède</country>
<wicri:noRegion>22100 Lund</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Anttu, Nicklas" uniqKey="Anttu N">Nicklas Anttu</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Solid State Physics, Lund University, PO Box 118</s1>
<s2>22100 Lund</s2>
<s3>SWE</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Suède</country>
<wicri:noRegion>22100 Lund</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Pistol, Mats Erik" uniqKey="Pistol M">Mats-Erik Pistol</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Solid State Physics, Lund University, PO Box 118</s1>
<s2>22100 Lund</s2>
<s3>SWE</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Suède</country>
<wicri:noRegion>22100 Lund</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Samuelson, Lars" uniqKey="Samuelson L">Lars Samuelson</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Solid State Physics, Lund University, PO Box 118</s1>
<s2>22100 Lund</s2>
<s3>SWE</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Suède</country>
<wicri:noRegion>22100 Lund</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Borgstrom, Magnus T" uniqKey="Borgstrom M">Magnus T. Borgström</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Solid State Physics, Lund University, PO Box 118</s1>
<s2>22100 Lund</s2>
<s3>SWE</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Suède</country>
<wicri:noRegion>22100 Lund</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Yartsev, Arkady" uniqKey="Yartsev A">Arkady Yartsev</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemical Physics, Lund University, PO Box 124</s1>
<s2>22100 Lund</s2>
<s3>SWE</s3>
<sZ>1 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>Suède</country>
<wicri:noRegion>22100 Lund</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">13-0169142</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0169142 INIST</idno>
<idno type="RBID">Pascal:13-0169142</idno>
<idno type="wicri:Area/Main/Corpus">000E53</idno>
<idno type="wicri:Area/Main/Repository">000717</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0957-4484</idno>
<title level="j" type="abbreviated">Nanotechnology : (Bristol, Print)</title>
<title level="j" type="main">Nanotechnology : (Bristol. Print)</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Blende structure</term>
<term>Crystal structure</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Incidence angle</term>
<term>Indium phosphide</term>
<term>Nanomaterial synthesis</term>
<term>Nanostructured materials</term>
<term>Nanowires</term>
<term>Photoluminescence</term>
<term>Quantum yield</term>
<term>Selectivity</term>
<term>Wurtzite structure</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Photoluminescence</term>
<term>Composé III-V</term>
<term>Semiconducteur III-V</term>
<term>Nanofil</term>
<term>Nanomatériau</term>
<term>Synthèse nanomatériau</term>
<term>Angle incidence</term>
<term>Structure blende</term>
<term>Structure cristalline</term>
<term>Structure wurtzite</term>
<term>Rendement quantique</term>
<term>Sélectivité</term>
<term>Phosphure d'indium</term>
<term>InP</term>
<term>Substrat nanofil</term>
<term>Te</term>
<term>Substrat InP</term>
<term>Substrat zinc</term>
<term>7867</term>
<term>8107V</term>
<term>8107B</term>
<term>8116</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We demonstrate a method that enables the study of photoluminescence of as-grown nanowires on a native substrate by non-destructively suppressing the contribution of substrate photoluminescence. This is achieved by using polarized photo-excitation and photoluminescence and by making an appropriate choice of incident angle of both excitation beam and photoluminescence collection direction. Using T<sub>E</sub>
-polarized excitation at a wavelength of 488 nm at an incident angle of ∼70° we suppress the InP substrate photoluminescence relative to that of the InP nanowires by about 80 times. Consequently, the photoluminescence originating from the nanowires becomes comparable to and easily distinguishable from the substrate photoluminescence. The measured photoluminescence, which peaks at photon energies of ∼1.35 eV and ∼1.49 eV, corresponds to the InP substrate with zinc-blende crystal structure and to the InP nanowires with wurtzite crystal structure, respectively. The photoluminescence quantum yield of the nanowires was found to be ∼20 times lower than that of the InP substrate. The nanowires, grown vertically in a random ensemble, neither exhibit substantial emission polarization selectivity to the axis of the nanowires nor follow excitation polarization preferences observed previously for a single nanowire.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0957-4484</s0>
</fA01>
<fA03 i2="1"><s0>Nanotechnology : (Bristol, Print)</s0>
</fA03>
<fA05><s2>24</s2>
</fA05>
<fA06><s2>11</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>IQBAL (Azhar)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>BEECH (Jason P.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>ANTTU (Nicklas)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>PISTOL (Mats-Erik)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>SAMUELSON (Lars)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>BORGSTRÖM (Magnus T.)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>YARTSEV (Arkady)</s1>
</fA11>
<fA14 i1="01"><s1>Department of Chemical Physics, Lund University, PO Box 124</s1>
<s2>22100 Lund</s2>
<s3>SWE</s3>
<sZ>1 aut.</sZ>
<sZ>7 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Department of Solid State Physics, Lund University, PO Box 118</s1>
<s2>22100 Lund</s2>
<s3>SWE</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA20><s2>115706.1-115706.8</s2>
</fA20>
<fA21><s1>2013</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>22480</s2>
<s5>354000503736130210</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>32 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>13-0169142</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Nanotechnology : (Bristol. Print)</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>We demonstrate a method that enables the study of photoluminescence of as-grown nanowires on a native substrate by non-destructively suppressing the contribution of substrate photoluminescence. This is achieved by using polarized photo-excitation and photoluminescence and by making an appropriate choice of incident angle of both excitation beam and photoluminescence collection direction. Using T<sub>E</sub>
-polarized excitation at a wavelength of 488 nm at an incident angle of ∼70° we suppress the InP substrate photoluminescence relative to that of the InP nanowires by about 80 times. Consequently, the photoluminescence originating from the nanowires becomes comparable to and easily distinguishable from the substrate photoluminescence. The measured photoluminescence, which peaks at photon energies of ∼1.35 eV and ∼1.49 eV, corresponds to the InP substrate with zinc-blende crystal structure and to the InP nanowires with wurtzite crystal structure, respectively. The photoluminescence quantum yield of the nanowires was found to be ∼20 times lower than that of the InP substrate. The nanowires, grown vertically in a random ensemble, neither exhibit substantial emission polarization selectivity to the axis of the nanowires nor follow excitation polarization preferences observed previously for a single nanowire.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70H67</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A07V</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B80A07B</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B80A16</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Photoluminescence</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Photoluminescence</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Composé III-V</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>III-V compound</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Compuesto III-V</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Nanofil</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Nanowires</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Nanomatériau</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Nanostructured materials</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Synthèse nanomatériau</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Nanomaterial synthesis</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Síntesis nanomaterial</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Angle incidence</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Incidence angle</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Structure blende</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Blende structure</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Estructura blenda</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Structure cristalline</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Crystal structure</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Structure wurtzite</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Wurtzite structure</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Estructura wurtzita</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Rendement quantique</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Quantum yield</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Sélectivité</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Selectivity</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Selectividad</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Phosphure d'indium</s0>
<s5>15</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Indium phosphide</s0>
<s5>15</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Indio fosfuro</s0>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>InP</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Substrat nanofil</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Te</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Substrat InP</s0>
<s4>INC</s4>
<s5>49</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Substrat zinc</s0>
<s4>INC</s4>
<s5>50</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>7867</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>8107V</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>8107B</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>8116</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>147</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles

Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

Le document en format XML

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